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Sanghee Park
KAIST 신소재공학과
Oxide TFT based Electronics and Display
Soft & Smart Materials & Devices Laboratory
shkp@kaist.ac.kr
High Mobility, High Stability Oxide Semiconductor TFT. AS oxide semiconductors with a mobility of 10 cm2/V·s have been studied as semiconductor materials to replace amorphous silicon, particularly for display driving components.
Buffer layer engineered trench-TFT (T-TFT) to solve trade-off between mobility and turn-on voltage. Achieves high mobility of 129 cm2/V·s and suitable Von of −0.4 V.
Top-gate self-aligned structured oxide TFTs suitable for high-end display backplanes with low parasitic capacitances. Uses PE-ALD deposited Al2O3 as interface tailoring layer and hydrogen barrier.
Flexible and transparent oxide TFTs for active matrix displays (AMOLED, AM-LEDs, quantum-dot LEDs). Developed using delamination and transfer methods for deformable displays.
Thin film encapsulation technology for OLED protection against water and oxygen. Focuses on nitride and alumina-based encapsulation for long-term use in mobile and TV displays.
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs
C Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving
Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT using Trench Structure
Engineering a sub-nanometer interface tailoring layer for precise hydrogen incorporation and defect passivation for high-end oxide thin-film transistors
Ultrathin, Flexible, and Transparent Oxide Thin-Film Transistors by Delamination and Transfer methods for Deformable Displays
High-Performance Thin H:SiON OLED Encapsulation Layer Deposited by PECVD at Low Temperature
Effect of H2 Addition during PECVD on the Moisture Barrier Property and Environmental Stability of Thin H:SiNx Passivation Film
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